IXGX35N120CD1 Key Features
- Low switching losses, low V(sat)
- MOS Gate turn-on
- drive simplicity
- Part: IXGX35N120CD1
- Manufacturer: IXYS (official site)
- Size: 154.58 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXGX35N120C | HiPerFAST IGBT |
| IXGX120N60B | IGBT |
| IXGX28N140B3H1 | 1400V IGBT |
| IXGX50N60A2D1 | IGBT |
| IXGX50N60AU1 | HiPerFAST IGBT |
IXGX35N120CD1 Description
+150 300 V V V V A A A A W °C °C °C °C TO-264 AA (IXGK) G C E C (TAB) PLUS 247TM (IXGX) G C (TAB) C E Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s G = Gate, E = Emitter,.