IXKC20N60C - CoolMOS Power MOSFET

Product Overview

IXYS Corporation

Part number	IXKC20N60C
Manufacturer	IXYS Corporation
File Size	228.08 KB
Description	CoolMOS Power MOSFET
Datasheet	IXKC20N60C Datasheet
Additional preview pages of the IXKC20N60C datasheet.

Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 30 pF).
CoolMOS™ 1) power MOSFET - 3rd generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness.
Enhanced total power density.

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Published: Dec 27, 2006 |