IXSH50N60B Description
+150 V V V V A A A A TO-247 AD G `=Eq^_F C E G = Gate, E = Emitter, C = Collector, TAB = Collector.
IXSH50N60B Key Features
- for minimum on-state conduction losses MOS Gate turn-on
- drive simplicity
- Part: IXSH50N60B
- Manufacturer: IXYS
- Size: 75.21 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXSH15N120A | IGBT |
| IXSH15N120AU1 | IGBT |
| IXSH15N120BD1 | Improved SCSOA Capability |
| IXSH24N60AU1 | HiPerFASTTM IGBT with Diode |
| IXSH24N60U1 | HiPerFASTTM IGBT with Diode |