IXSM25N100 Datasheet Low VCE(sat) IGBT

Manufacturer: IXYS (now Littelfuse)

IXSM25N100 low vce(sat) igbt by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	IXSM25N100
Manufacturer	IXYS (now Littelfuse)
File Size	112.32 KB
Description	Low VCE(sat) IGBT
Download	IXSM25N100 Download (PDF)

Overview

VCES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 25 N100 1000 V IXSH/IXSM 25 N100A 1000 V I C25 50 A 50 A VCE(sat) 3.5 V 4.0 V Short Circuit SOA Capability www.DataSheet4U.com Symbol V CES Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150° C; RGE = 1 MΩ Continuous Transient T C = 25°C T C = 90°C T C = 25°C, 1 ms V GE = 15 V, TJ = 125°C, RG = 4.7 Ω Clamped inductive load, L = 30 µ H V GE = 15 V, VCE = 0.6 • V CES, TJ = 125°C RG = 33 Ω, non repetitive T C = 25°C Maximum Ratings 1000 1000 ±20 ±30 50 25 100 ICM = 50 @ 0.8 VCES 10 200 -55 ...

+150 150 -55 ...

+150 V V V V A A A A µs TO-247 AD (IXSH) V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight g G C E TO-204 AE (IXSM) C W °C °C °C G = Gate, E = Emitter, C = Collector, TAB = Collector Mounting torque 1.13/10 Nm/lb.in.

Key Features

International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 20 kHz q q q q q q BVCES VGE(th) I CES I GES VCE(sat) IC IC = 3 mA, VGE = 0 V = 2.5 mA, VCE = VGE V CE = 0.8.
VCES V GE = 0 V V CE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V.

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