IXSX35N120BD1 Description
+150 300 10 6 V V V V A A A A ms W W °C °C °C °C g g TO-264 AA (IXSK) G C TM E PLUS TO-247 (IXSX) G G = Gate, E = Emitter, C (TAB) C E C = Collector, TAB = Collector.
IXSX35N120BD1 Key Features
- for minimum on-state conduction losses MOS Gate turn-on
- drive simplicity Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low IRM