IXTA130N10T
IXTA130N10T is Power MOSFET manufactured by IXYS.
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA130N10T IXTP130N10T
VDSS = ID25 =
RDS(on) ≤
100V 130A 9.1mΩ
TO-263 (IXTA)
Symbol
VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-220) TO-220 TO-263
Maximum Ratings
100 100
± 30
130 75
65 500
-55 ... +175 175
-55 ... +175
300 260
1.13 / 10
3.0 2.5
A mJ
°C °C °C
°C °C
Nm/lb.in. g g
Symbol
Test Conditions
(TJ =...
