Overview: TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated IXTA130N10T IXTP130N10T VDSS = ID25 =
RDS(on) ≤ 100V 130A 9.1mΩ TO-263 (IXTA) Symbol
VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-220) TO-220 TO-263 Maximum Ratings 100 100
± 30
130 75
350
65 500
360
-55 ... +175 175
-55 ... +175
300 260
1.13 / 10
3.0 2.5 V V
V
A A A
A mJ
W
°C °C °C
°C °C
Nm/lb.in.
g g Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 25A, Notes 1, 2 Characteristic Values Min. Typ. Max.
100 V 2.5 4.5 V ± 200 nA 5 μA 250 μA
9.
