Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature
Advantages Easy to mount Space savings High power density.
Full PDF Text Transcription for IXTA160N075T (Reference)
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Preliminary Technical Information TrenchMVTM Power MOSFET IXTA160N075T IXTP160N075T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 160 6.0 V A mΩ S...
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ement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 160 6.0 V A mΩ Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175C, RG = 5 Ω TC = 25°C 1.6 mm (0.062 in.
IXTA160N075T Datasheet
