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IXTA2N80 Datasheet High Voltage MOSFET

Manufacturer: IXYS (now Littelfuse)

Overview: Advanced Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 2N80 IXTP 2N80 VDSS ID25 RDS(on) = 800 V = 2 A = 6.2 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM Maximum Ratings 800 800 ±20 ±30 2 8 2 V V V V A A A mJ mJ V/ns W °C °C °C Nm/lb.in. 4 300 g °C TO-220AB (IXTP) GD S D (TAB) TO-263 AA (IXTA) TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 18 Ω TC = 25°C 6 200 5 54 -55 ... +150 150 -55 ... +150 G S D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Mounting torque 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Maximum lead temperature for soldering Ÿ International standard packages Ÿ Low RDS (on).

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