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PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA50N20P IXTP50N20P IXTQ50N20P
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dV/dt
PD
TJ TJM Tstg
TL TSOLD Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C
1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting torque (TO-3P,TO-220) TO-263 TO-220 TO-3P
Maximum Ratings
200
V
200
V
±20
V
±30
V
50
A
120
A
50
A
1
J
10
V/ns
360
W
- 55 ... +175 175
- 55 ... +175
300 260
1.13/10
2.5 3.0 5.5
°C °C °C
°C °C
Nm/lb.in.
IXTA50N20P Datasheet
