IXTA80N10T7 Description
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA80N10T7 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 100 80 14 V A mΩ Symbol VDSS VDGR VGSM ID25 IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25°C to.
IXTA80N10T7 Key Features
- easy to drive and to protect