Overview: Preliminary Technical Information TrenchMVTM Power MOSFET IXTA80N10T7 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 =
RDS(on) ≤ 100 80 14 V A mΩ Symbol
VDSS VDGR VGSM ID25 IDM IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 15 Ω TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Maximum Ratings TO-263 (7-lead) (IXTA..7) 100 V 100 V ± 30
80 220
25 400
3 V
A A A mJ
V/ns 1 7
Pin-out:1 - Gate 2, 3 - Source 4 - NC (cut) 5,6,7 - Source TAB (8) - Drain (TAB) 230
-55 ... +175 175
-55 ...
