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Power MOSFET ISOPLUS220TM
IXTC 13N50
Electrically Isolated Back Surface
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS = 500 V ID25 = 12 A RDS(on) = 0.4 Ω
Preliminary Data Sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt
PD TJ TJM Tstg TL Weight
Symbol
VDSS VGS(th) IGSS IDSS
ISOPLUS220TM
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
E Continuous
Transient
T TC = 25°C
TC = 25°C, pulse width limited by TJM TC = 25°C
E TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
L TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
SO 1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
500
V
500
V
±20
V
±30
V
12
A
48
A
13
A
18
mJ
5 V/ns
140
W
-55 ... +150
°C
150
°C
-55 ...
IXTC13N50 Datasheet
