IXTC26N50P Description
+150 V V V V A A A mJ J V/ns W °C °C °C °C V~ N/lb.
IXTC26N50P Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation z Low drain to tab capacitance(<30pF)
- Part: IXTC26N50P
- Manufacturer: IXYS
- Size: 571.67 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
IXTC26N50P | N-Channel MOSFET |