IXTC75N10 Datasheet | IXYS

Features l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 n H) - easy to drive and to protect Fast switching times Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 100 2 4 ±100 TJ = 25°C TJ = 125°C 200 1 0.020 V V n A µA m A Ω Advantages l l l l l VDSS VGS(th) IGSS IDSS RDS(on) V GS = 0 V, ID = 250 µA V DS = VGS, ID = 250 µA V GS = ±20 VDC, VDS = 0 V DS = 0.8 VDSS VGS = 0 V Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers V GS = 10 V, ID = IT Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % l l Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density © 2002 IXYS All rights reserved 98881 (1/2) IXTC 75N10 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 25 30 4500 VGS = 0 V, VDS = 25 V, f = 1 MHz 1300 550 40 VGS = 10 V, VDS = 0.5 VDSS, ID = IT RG = 2 Ω, (External) 60 S p F p F p F ns ns ns ns n C n C n C K/W K/W ISOPLUS220 OUTLINE gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC Rth CK V DS = 10 V; ID = IT, pulse test 60 110 100 140 30 60 180 260 VGS = 10 V, VDS = 0.5 VDSS, ID = IT 30 70 90 160 0.54 0.30 Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions V GS = 0 V Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 75 300 1.75 300 A A V ns Note: All terminals are solder plated. 1 - Gate 2 - Drain 3 - Source Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IF = IS, -di/dt = 100 A/µs, VR = 100 V Note: 1. IT = 37.5A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072...