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IXTH12N100 - MOSFET

Download the IXTH12N100 datasheet PDF. This datasheet also covers the IXTH10N100 variant, as both devices belong to the same mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s l International standard packages Low RDS (on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTH10N100_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTH12N100L Power MOSFET IXYS
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IXTH12N150 High Voltage Power MOSFET IXYS
IXTH12N65X2 Power MOSFET IXYS

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTH10N100 MOSFET
IXTH10P50 P-Channel MOSFET
IXTH11P50 P-Channel MOSFET
IXTH130N10T Power MOSFET
IXTH14N100 MegaMOSTMFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com MegaMOSTMFET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS 1000 V 1000 V ID25 10 A 12 A RDS(on) 1.20 Ω 1.05 Ω N-Channel Enhancement Mode Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 10N100 12N100 10N100 12N100 Maximum Ratings 1000 1000 ±20 ±30 10 12 40 48 300 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C TO-247 AD (IXTH) D (TAB) TO-204 AA (IXTM) G G = Gate, S = Source, D = Drain, TAB = Drain Mounting torque 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 °C Features l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.