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IXTH152N085T - N-Channel MOSFET

Key Features

  • Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH152N085T IXTQ152N085T VDSS ID25 RDS(on) =8 5 V = 152 A ≤ 7.0 m Ω Symbol V DSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25 °C to 175 °C TJ = 25°C to 175 °C; R GS = 1 M Ω Transient TC = 25 °C Lead Current Limit, RMS TC = 25 °C, pulse width limited by T JM TC = 25°C TC = 25 °C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C Maximum Ratings 85 85 ± 20 152 75 410 25 750 3 360 -55 ... +175 175 -55 ... +175 V V V A A A A mJ TO-247 (IXTH) G D S (TAB) TO-3P (IXTQ) V/ns W °C °C °C °C °C G D S D = Drain TAB = Drain (TAB) 1.6 mm (0.062 in.