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IXTH16P20 - Standard Power MOSFET

Key Features

  • International standard package JEDEC TO-247 AD.
  • Low RDS (on).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advance Technical Information Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH 16P20 VDSS ID25 RDS(on) = -200 V = -16 A = 0.22 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJ TC = 25°C TC = 25°C TC = 25°C Maximum Ratings -200 -200 ± 20 ± 30 -16 -64 -16 30 180 -55 ... +150 150 -55 ... +150 V V V V A A A mJ W °C °C °C °C TO-247 AD D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 Features • International standard package JEDEC TO-247 AD • Low RDS (on) HDMOSTM process 1.13/10 Nm/lb.in.