Overview: Preliminary Technical Information TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated IXTH220N055T IXTQ220N055T VDSS = ID25 =
RDS(on) ≤ 55 220 4.0 V A mΩ TO-247 (IXTH) Symbol
VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque
TO-3P TO-247 Maximum Ratings
55 V 55 V G DS (TAB) ± 20
220 75
600
25 1.0
3 V
A A A
A J
V/ns TO-3P (IXTQ) G D S (TAB) 430
-55 ... +175 175
-55 ... +175 W G = Gate D = Drain °C S = Source TAB = Drain °C °C 300 °C 260 °C 1.13 / 10 Nm/lb.in.
5.
