Overview: Preliminary Technical Information TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated IXTH220N075T IXTQ220N075T VDSS = ID25 =
RDS(on) ≤ 75 220 4.5 V A mΩ TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 3.3 Ω TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque
TO-3P TO-247 75 75
± 20
220 75
600
25 1.0 VG V DS
V
A TO-3P (IXTQ) A A
A J (TAB) 3
480 -55 ... +175
175 -55 ... +175 V/ns
W °C °C °C G D S
G = Gate S = Source D = Drain TAB = Drain (TAB) 300 °C 260 °C
1.13 / 10 Nm/lb.in.
5.
