Full PDF Text Transcription for IXTH230N085T (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXTH230N085T. For precise diagrams, and layout, please refer to the original PDF.
Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH230N085T IXTQ230N085T VDSS = ID25 = RDS(on) ≤ 85 230 4.4 V A mΩ T...
View more extracted text
IXTH230N085T IXTQ230N085T VDSS = ID25 = RDS(on) ≤ 85 230 4.4 V A mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤IDM, di/dt ≤100 A/ms, VDD ≤VDSS TJ ≤175°C, RG = 3.3Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque TO-3P TO-247 Maximum Ratings 85 V 85 V G DS (TAB) ± 20 230 75 520 40 1.0 3 V A A A A J V/ns TO-3P (IXTQ) G D S (TAB) 550 -55 ... +175 175 -55 ...
IXTH230N085T Datasheet
