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IXTH40N30 Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Download the IXTH40N30 datasheet PDF. This datasheet also includes the IXTH35N30 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IXTH35N30_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Overview

www.DataSheet4U.com MegaMOSTMFET IXTH 35N30 IXTH 40N30 IXTM 40N30 N-Channel Enhancement Mode VDSS 300 V 300 V 300 V ID25 35 A 40 A 40 A RDS(on) 0.10 Ω 0.085 Ω 0.088 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 35N30 40N30 35N30 40N30 Maximum Ratings 300 300 ±20 ±30 35 40 140 160 300 -55 ...

+150 150 -55 ...

+150 V V V V A A A A W °C °C °C TO-247 AD (IXTH) D (TAB) TO-204 AE (IXTM) D G = Gate, S = Source, G D = Drain, TAB = Drain Mounting torque 1.13/10 Nm/lb.in.

Key Features

  • l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s l International standard packages Low RDS (on).

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