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IXTH50N20 - MegaMOS FET

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  • l l l l l International standard packages Low RDS (on).

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www.DataSheet4U.com MegaMOSTMFET IXTH 50N20 IXTM 50N20 VDSS = 200 V = 50 A ID25 RDS(on) = 45 mΩ N-Channel Enhancement Mode Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient T C = 25°C T C = 25°C, pulse width limited by TJM T C = 25°C Maximum Ratings 200 200 ±20 ±30 50 200 300 -55 ... +150 150 -55 ... +150 V V V V A A W °C °C °C TO-247 AD (IXTH) D (TAB) TO-204 AE (IXTM) D G = Gate, S = Source, G Mounting torque 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 °C D = Drain, TAB = Drain Maximum lead temperature for soldering 1.6 mm (0.062 in.
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