Click to expand full text
www.DataSheet4U.com
Standard Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTH 50P085
VDSS ID25
RDS(on)
= -85 V = -50 A = 55 mΩ
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJ TC = 25°C TC = 25°C TC = 25°C
Maximum Ratings -85 -85 ± 20 ± 30 -50 -200 -50 30 300 -55 ... +150 150 -55 ... +150 V V V V A A A mJ W °C °C °C °C
TO-247 AD
D (TAB)
G = Gate, S = Source,
D = Drain, TAB = Drain
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque
300
Features • International standard package JEDEC TO-247 AD • Low RDS (on) HDMOSTM process
1.13/10 Nm/lb.in.
IXTH50P085 Datasheet
