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PolarPTM Power MOSFETs
P-Channel Enhancement Mode Avalanche Rated
IXTA52P10P IXTP52P10P IXTQ52P10P IXTH52P10P
TO-263 AA (IXTA)
TO-220AB (IXTP)
D
G S
D (Tab)
GD S
D (Tab)
G S
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient
Maximum Ratings
-100
V
-100
V
±20
V
±30
V
TC = 25°C TC = 25°C, Pulse Width Limited by TJM
TC = 25°C TC = 25°C
- 52
A
-130
A
- 52
A
1.5
J
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
10
300
-55 ... +150 150
-55 ... +150
V/ns
W
°C °C °C
1.6mm (0.062 in.) from Case for 10s Plastic body for 10s
300
°C
260
°C
Mounting Torque (TO-3P,TO-220,TO-247) 1.13/10
Nm/lb.in.
TO-263 TO-220 TO-3P TO-247
2.5
g
3.0
g
5.5
g
6.
IXTH52P10P Datasheet
