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IXTH67N10 - N-Channel MOSFET

Key Features

  • S D = Drain, TAB = Drain D (TAB) z International standard packages z Low RDS (on).

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MegaMOSTMFET N-Channel Enhancement Mode IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 VDSS 100 V 100 V ID25 67 A 75 A RDS(on) 25 mΩ 20 mΩ TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR E VGS VGSM ID25 T IDM PD E TJ TJM L Tstg Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C Mounting torque O Maximum lead temperature for soldering S 1.6 mm (0.062 in.) from case for 10 s 100 V 100 V ±20 V ±30 V 67N10 75N10 67N10 75N10 67 A 75 A 268 A 300 A 300 W -55 ... +150 °C 150 °C -55 ... +150 °C TO-204 TO-247 TO-268 1.13/10 Nm/lb.in.