IXTK102N30P Datasheet | IXYS

.. Polar HTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTK 102N30P VDSS = 300 V ID25 = 102 A RDS(on) ≤ 33 mΩ Symbol VDSS VDGR VGSS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C Maximum Ratings 300 300 ±20 ±30 102 75 250 60 60 2.5 10 700 -55 ... +150 150 -55 ... +150 V V V V A A A A m J J V/ns W °C °C °C TO-264 (IXTK) (TAB) G = Gate S = Source D = Drain TAB = Drain Features l l l International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque TO-264 300 °C 260 °C 1.13/10 Nm/lb.in. 10 g Advantages l l l Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 500µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125° C Characteristic Values Min. Typ. Max. 300 2.5 5.0 ±200 25 250 33 V V n A µA µA mΩ VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved DS99130E(12/05) IXTK 102N30P .. Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. 45 57 7500 S p F p F p F ns ns ns ns n C n C n C 0.18° C/W 0.15 ° C/W TO-264 (IXTK) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC Rth...