Overview: PolarHTTM Power MOSFET IXTK 140N20P N-Channel Enhancement Mode Avalanche Rated VDSS = 200 V ID25 = 140 A ≤RDS(on) 18 mΩ Symbol Test Conditions Maximum Ratings TO-264 (IXTK) VDSS VDGR
VGS VGSM
ID25 ID(RMS) IDM IAR EAR EAS
dv/dt
PD TJ TJM Tstg
TL TSOLD Md Weight TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Continuous Transient
TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque 200 V 200 V
±20 V ±30 V
140 A 75 A
280 A 60 A
100 mJ 4J
10 V/ns 800 W -55 ... +175 175
-55 ... +150 °C °C °C 300 ° C 260 ° C 1.13/10 Nm/lb.in.
10 g Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max.
200 V VGS(th) VDS = VGS, ID = 500µA 2.5 5.0 V IGSS VGS = ±20 VDC, VDS = 0 ±200 nA IDSS VDS = VDSS VGS = 0 V TJ = 150° C 25 µA 250 µA RDS(on) VGS = 10 V, ID = 0.
