IXTK140N20P
IXTK140N20P is Power MOSFET manufactured by IXYS.
d Inductive Switching (UIS) rated l Low package inductance
- easy to drive and to protect
Advantages l Easy to mount l Space savings l High power density
© 2006 IXYS All rights reserved
DS99194E(12/05)
IXTK 140N20P
Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC Rth CK
Test Conditions
Characteristic Values (TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
50 84
VGS = 0 V, VDS = 25 V, f = 1 MHz
7500 1800
280 p F p F p F
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A RG = 3.3 Ω (External)
30 ns 35 ns 150 ns 90 ns
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
240 n C 50 n C
100 n C
0.18° C/W 0.15 ° C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values (TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
IS VGS = 0 V ISM Repetitive VSD IF = IS, VGS = 0 V,
Pulse test, t ≤300 µs, duty cycle d≤ 2 %
140 A 280 A 1.5 V trr IF = 25 A, -di/dt = 100 A/µs QRM VR = 100 V, VGS = 0 V
180 ns 3.5...
