IXTK180N15 Description
Advance Technical Information .. +150 V V V V A A A A mJ J V/ns W °C °C °C °C Nm/lb.in. g G D S TO-264 AA (IXTK) D (TAB) G = Gate S = Source D = Drain Tab = Drain.
IXTK180N15 Key Features
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- International standard package
- Fast switching times