Overview: PolarHTTM Power MOSFET IXTK 200N10P N-Channel Enhancement Mode Avalanche Rated V = 100 V DSS
ID25 = 200 A RDS(on) ≤ 7.5 mΩ Symbol
VDSS VDGR
VGS VGSM
ID25 ID(RMS) IDM I
AR
EAR E
AS
dv/dt
PD TJ TJM Tstg
TL T
SOLD
Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ
Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM T C = 25° C TC = 25° C T C = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω
TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s
Mounting torque Maximum Ratings 100 V 100 V ±20 V ±30 V 200 A 75 A 400 A 60 A 100 mJ 4 J 10 V/ns 800 W -55 ... +175 °C 175 °C -55 ... +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 10 g Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BV DSS V GS = 0 V, I
D = 250 µA Characteristic Values Min. Typ. Max. 100 V VGS(th) VDS = VGS, ID = 500µA 2.5 5.0 V IGSS VGS = ±20 VDC, VDS = 0 ±200 nA IDSS VDS = VDSS VGS = 0 V TJ = 150° C 25 µA 250 µA RDS(on) VGS = 10 V, ID = 0.5 ID25 VGS = 15 V, ID = 400A Pulse test, t ≤300 µs, duty cycle d ≤ 2 % 7.5 m Ω 5.
