IXTK200N10P Description
+150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 10 g Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BV DSS V GS = 0 V, I D = 250 µA Characteristic Values Min.
IXTK200N10P Key Features
- easy to drive and to protect
IXTK200N10P is Power MOSFET manufactured by IXYS.
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
IXTK200N10P | N-Channel MOSFET |
Inchange Semiconductor |
IXTK200N10L2 | N-Channel MOSFET |
IXYS |
IXTK200N10L2 | Power MOSFET |
+150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 10 g Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BV DSS V GS = 0 V, I D = 250 µA Characteristic Values Min.