IXTK250N10 Description
+150 V V V V A A A A mJ J V/ns W °C °C °C °C Nm/lb.in. g G D S TO-264 AA (IXTK) D (TAB) G = Gate S = Source D = Drain Tab = Drain 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 300 0.7/6.
IXTK250N10 Key Features
- Low RDS (on) HDMOSTM process -Rugged polysilicon gate cell structure -International standard package -Fast switching tim