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MegaMOSTMFET
IXTH / IXTM 10N100 IXTH / IXTM 12N100
VDSS 1000 V 1000 V
ID25 10 A 12 A
RDS(on) 1.20 Ω 1.05 Ω
N-Channel Enhancement Mode
Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 10N100 12N100 10N100 12N100
Maximum Ratings 1000 1000 ±20 ±30 10 12 40 48 300 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C
TO-247 AD (IXTH)
D (TAB)
TO-204 AA (IXTM)
G G = Gate, S = Source, D = Drain, TAB = Drain
Mounting torque
1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 °C Features
l l l l
Maximum lead temperature for soldering 1.6 mm (0.062 in.
IXTM10N100 Datasheet
