• Part: IXTP160N10T
  • Description: Power MOSFET
  • Manufacturer: IXYS
  • Size: 169.46 KB
Download IXTP160N10T Datasheet PDF
IXYS
IXTP160N10T
IXTP160N10T is Power MOSFET manufactured by IXYS.
- Part of the IXTA160N10T comparator family.
Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA160N10T IXTP160N10T VDSS = ID25 = RDS(on) ≤ 100 160 7.0 V A mΩ TO-263 (IXTA) Symbol VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque (TO-220) TO-220 TO-263 Maximum Ratings 100 100 ± 30 160 75 25 500 A mJ 3...