Download the IXTP2N100 datasheet PDF.
This datasheet also covers the IXTA2N100 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
z International Standard Packages z Avalanche Rated z Low Package Inductance (< 5nH) z Fast Switching Times
Advantages
z Easy to Mount z Space Savings z High Power Density.
Full PDF Text Transcription for IXTP2N100 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXTP2N100. For precise diagrams, and layout, please refer to the original PDF.
High Voltage MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA2N100 IXTP2N100 VDSS = ID25 = ≤RDS(on) 1000V 2A 7Ω TO-263 (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA...
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S(on) 1000V 2A 7Ω TO-263 (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220) TO-263 TO-220 Maximum Ratings 1000 1000 V V ±20 V ±30 V 2A 8A 2A 150 mJ 5 V/ns 100 W - 55 ... +150 150 - 55 ... +150 300 260 1.13 / 10 2.5 3.0 °C °C °C °C °C Nm/lb.in.