Datasheet4U Logo Datasheet4U.com

IXTP2N100 - Power MOSFET

Download the IXTP2N100 datasheet PDF. This datasheet also covers the IXTA2N100 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z International Standard Packages z Avalanche Rated z Low Package Inductance (< 5nH) z Fast Switching Times Advantages z Easy to Mount z Space Savings z High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA2N100-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTP2N100 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTP2N100. For precise diagrams, and layout, please refer to the original PDF.

High Voltage MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA2N100 IXTP2N100 VDSS = ID25 = ≤RDS(on) 1000V 2A 7Ω TO-263 (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA...

View more extracted text
S(on) 1000V 2A 7Ω TO-263 (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220) TO-263 TO-220 Maximum Ratings 1000 1000 V V ±20 V ±30 V 2A 8A 2A 150 mJ 5 V/ns 100 W - 55 ... +150 150 - 55 ... +150 300 260 1.13 / 10 2.5 3.0 °C °C °C °C °C Nm/lb.in.