Click to expand full text
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTP55N075T IXTY55N075T
N-Channel Enhancement Mode Avalanche Rated
VDSS = 75 ID25 = 55 RDS(on) ≤ 19.5
V A mΩ
TO-220 (IXTP)
Symbol
VDSS VDGR VGSM ID25 IL IDM IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient
TC = 25°C Package Current Limit, RMS
TO-252
TC = 25°C, pulse width limited by TJM
TC = 25°C TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG =18 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds
Mounting torque (TO-220)
75 V 75 V
± 20 V
55 A 25 A 150 A
10 A 250 mJ
3 V/ns
130 W
-55 ... +175 175
-55 ... +175
°C °C °C
300 °C 260 °C
1.13 / 10 Nm/lb.in.
TO-220 TO-252
3g 0.
IXTP55N075T Datasheet
