IXTP70N085T - Power MOSFET

This page provides the datasheet information for the IXTP70N085T, a member of the IXTA70N085T Power MOSFET family.

Features

Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density.

IXYS Corporation

📥 Download Datasheet

Datasheet Details

Part number	IXTP70N085T
Manufacturer	IXYS Corporation
File Size	169.90 KB
Description	Power MOSFET
Datasheet	IXTP70N085T Datasheet
Additional preview pages of the IXTP70N085T datasheet.

📁 Similar Datasheet

IXTP70N085T - N-Channel MOSFET (INCHANGE)
IXTP70N075T2 - Power MOSFET (IXYS)
IXTP70N075T2 - N-Channel MOSFET (INCHANGE)
IXTP75N10P - N-Channel MOSFET (IXYS)
IXTP75N10P - N-Channel MOSFET (INCHANGE)
IXTP76N075T - N-Channel MOSFET (INCHANGE)
IXTP76N25T - N-Channel MOSFET (INCHANGE)
IXTP76N25T - Power MOSFET (IXYS)
IXTP76P10T - Power MOSFET (IXYS)
IXTP7N60P - Power MOSFET (IXYS)

Other Datasheets by IXYS Corporation

IXTP76N075T - Power MOSFET
IXTP7N60PM - Power MOSFET
IXTP01N100D - N-Channel MOSFET
IXTP02N50D - High Voltage MOSFET
IXTP05N100 - Power MOSFET
IXTP08N50D2 - N-Channel MOSFET
IXTP10N60PM - PolarHV Power MOSFET
IXTP110N055P - PolarHT Power MOSFET

Full PDF Text Transcription

Click to expand full text

Preliminary Technical Information TrenchMVTM Power MOSFET IXTA70N085T IXTP70N085T N-Channel Enhancement Mode Avalanche Rated VDSS = 85 ID25 RDS(on) = ≤ 70 13.5 V A mΩ Symbol VDSS VDGR VGSM ID25 IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 10 Ω TC = 25°C 1.6 mm (0.062 in.

Published: Feb 13, 2015 |