IXTP76N075T - Power MOSFET

This page provides the datasheet information for the IXTP76N075T, a member of the IXTA76N075T Power MOSFET family.

Features

Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density.

IXYS Corporation

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Datasheet Details

Part number	IXTP76N075T
Manufacturer	IXYS Corporation
File Size	171.68 KB
Description	Power MOSFET
Datasheet	IXTP76N075T Datasheet
Additional preview pages of the IXTP76N075T datasheet.

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Full PDF Text Transcription

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Preliminary Technical Information TrenchMVTM Power MOSFET IXTA76N075T IXTP76N075T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 V 76 A 12 mΩ Symbol VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 10 Ω TC = 25°C 1.6 mm (0.062 in.

Published: Feb 13, 2015 |