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Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA88N085T IXTP88N085T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
85 V 88 A 11 m Ω
Symbol
VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque (TO-220)
TO-220 TO-263
Maximum Ratings
85 V 85 V
± 20
88 75 240
25 500
V
A A A
A mJ
TO-263 (IXTA) G S
TO-220 (IXTP)
(TAB)
3 V/ns
230 W
-55 ... +175 175
-40 ... +175
°C °C °C
300 °C 260 °C
1.13 / 10 Nm/lb.
IXTP88N085T Datasheet
