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IXTQ110N055P - PolarHT Power MOSFET

Key Features

  • z Md Weight 1.13/10 Nm/lb. in. 5.5 4 3 g g g z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 250μA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 55 2.5 5.0 ±100 25 250 11 13.5 V Advantages z V nA μA μA mΩ z z Easy to mount Spac.

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www.DataSheet4U.com PolarHTTM Power MOSFET N-Channel Enhancement Mode IXTQ 110N055P IXTA 110N055P IXTP 110N055P VDSS ID25 RDS(on) = 55 V = 110 A = 13.5 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGS VGSM ID25 IDRMS IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Tranisent TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C Maximum Ratings 55 55 ± 20 ± 30 110 75 250 110 30 1.0 10 330 -55 ... +175 175 -55 ... +150 V V V V A A A A mJ J V/ns G G D S (TAB) G D S (TAB) TO-220 (IXTP) TO-263 (IXTA) W °C °C °C °C °C G = Gate S = Source S (TAB) D = Drain TAB = Drain 1.6 mm (0.062 in.