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IXTQ150N06P - N-channel MOSFETs

Key Features

  • z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z Easy to mount Space savings High power density 1.6 mm (0.062 in. ) from case for 10 s Maximum tab temperature for soldering package for 10s Mounting torque 300 260 Md Weight 1.13/10 Nm/lb. in. 5.5 g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advanced Technical Information PolarHTTM Power MOSFET www.datasheet4u.com N-Channel IXTQ 150N06P VDSS ID25 RDS(on) = 60 V = 150 A = 10 mΩ Enhancement Mode TO-3P (IXTQ) Symbol VDSS VDGR VGS VGSM ID25 IDRMS IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C Maximum Ratings 60 55 ± 20 ± 30 150 75 280 60 40 1.0 10 480 -55 ... +175 175 -55 ...