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IXTQ150N15P - Power MOSFET

Key Features

  • l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99299E(03/06) Symbol g fs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd R thJC RthCK RthCS Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. V = 10 V; I = 0.5 I , pulse test 55 80 S DS D D25 VGS = 0 V, VDS =.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PolarHTTM Power MOSFET IXTK 150N15P IXTQ 150N15P N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 150 V 150 A 13 m Ω TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 150 V 150 V VGS VGSM Continuous Transient ±20 V ±30 V ID25 ID(RMS) I DM IAR EAR EAS TC = 25° C External lead current limit T C = 25° C, pulse width limited by T JM TC = 25° C TC = 25° C TC = 25° C 150 A 75 A 340 A 60 A 80 mJ 2.5 J dv/dt PD TJ TJM Tstg IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤175° C, RG = 4 Ω TC = 25° C 10 V/ns 714 W -55 ... +175 °C 175 °C -55 ... +175 °C T L TSOLD 1.6 mm (0.062 in.