• Part: IXTQ152N085T
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: IXYS
  • Size: 278.82 KB
Download IXTQ152N085T Datasheet PDF
IXYS
IXTQ152N085T
IXTQ152N085T is N-Channel MOSFET manufactured by IXYS.
- Part of the IXTH152N085T comparator family.
Preliminary Technical Information Trench MVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH152N085T IXTQ152N085T VDSS ID25 RDS(on) =8 5 V = 152 A ≤ 7.0 m Ω Symbol V DSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25 °C to 175 °C TJ = 25°C to 175 °C; R GS = 1 M Ω Transient TC = 25 °C Lead Current Limit, RMS TC = 25 °C, pulse width limited by T JM TC = 25°C TC = 25 °C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C Maximum Ratings 85 85 ± 20 152 75 410 25 750 3 360 -55 ... +175 175 -55 ... +175 V V V A A A A m J TO-247 (IXTH) (TAB) TO-3P (IXTQ) V/ns W °C °C °C °C °C G D S D = Drain TAB = Drain (TAB) 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque TO-3P TO-247 300 260 1.13 / 10 Nm/lb.in. 5.5 6 g g G = Gate S = Source Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 250 μA VGS = ± 20 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 150°C Characteristic Values Min. Typ. Max. 85 2.0 4.0 ± 200 5 250 5.5 7.0 V V n A μA μA mΩ Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications DS99699 (11/06) VGS = 10 V, ID = 25 A, Notes 1, 2 © 2006 IXYS CORPORATION All rights reserved...