Overview: Preliminary Technical Information TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated IXTH152N085T IXTQ152N085T VDSS ID25 RDS(on) =8 5 V = 152 A ≤ 7.0 m Ω Symbol V DSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25 °C to 175 °C TJ = 25°C to 175 °C; R GS = 1 M Ω Transient TC = 25 °C Lead Current Limit, RMS TC = 25 °C, pulse width limited by T JM TC = 25°C TC = 25 °C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C Maximum Ratings 85 85 ± 20 152 75 410 25 750 3 360 -55 ... +175 175 -55 ... +175 V V V A A A A mJ TO-247 (IXTH) G D S (TAB) TO-3P (IXTQ) V/ns W °C °C °C °C °C G D S D = Drain TAB = Drain (TAB) 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque TO-3P TO-247 300 260 1.13 / 10 Nm/lb.in. 5.5 6 g g G = Gate S = Source Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 250 μA VGS = ± 20 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 150°C Characteristic Values Min. Typ. Max. 85 2.0 4.0 ± 200 5 250 5.5 7.
