IXTQ200N075T
Features z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance
- easy to drive and to protect
Advantages z Easy to mount z Space savings z High power density
© 2006 IXYS CORPORATION All rights reserved
DS99634 (11/06)
IXTH200N075T IXTQ200N075T
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified) gfs VDS= 10 V; ID = 60 A, Note 1
Ciss Coss Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz td(on) Resistive Switching Times tr VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A td(off) RG = 5 Ω (External) tf
Qg(on) Qgs Qgd
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A
Rth JC Rth CH
TO-3P TO-247
Characteristic Values Min. Typ. Max.
70 110
6800 1040
190 p F p F p F
31 ns 57 ns 54 ns 52 ns
160 n C 35 n C 43 n C
0.25 0.21
0.35 °C/W
°C/W °C/W
Source-Drain Diode
Symbol
Test Conditions
TJ = 25°C unless otherwise specified)
IS VGS = 0 V
ISM Pulse width limited by TJM
VSD IF = 25 A, VGS = 0 V, Note 1 trr IF = 25 A, -di/dt = 100 A/μs VR = 40 V, VGS = 0...
