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IXTQ240N055T - Power MOSFET

Download the IXTQ240N055T datasheet PDF. This datasheet also covers the IXTH240N055T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power density.

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Note: The manufacturer provides a single datasheet file (IXTH240N055T-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTQ240N055T (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTQ240N055T. For precise diagrams, and layout, please refer to the original PDF.

Preliminary Technical Information TrenchMVTM Power MOSFET IXTH240N055T IXTQ240N055T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 240 3.6 V A mΩ S...

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ement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 240 3.6 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque TO-3P TO-247 Maximum Ratings 55 55 ± 20 240 75 650 25 1.0 V V V A A A A J 3 V/ns 480 W -55 ... +175 175 -40 ... +175 °C °C °C 300 °C 260 °C 1.13 / 10

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