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PolarHTTM Power MOSFET
N-Channel Enhancement Mode Preliminary Data Sheet
IXTQ 64N25P IXTT 64N25P
VDSS ID25
RDS(on)
= 250 V = 64 A = 48 mΩ
Symbol VDSS VDGR VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
Maximum Ratings 250 250 ± 20 V V V A A A mJ J V/ns W °C °C °C °C
TO-3P (IXTQ)
TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C
64 160 60 40 1.0 10 400 -55 ... +150 150 -55 ... +150
G
D
S
(TAB)
TO-268 (IXTT)
G G = Gate S = Source
S D = Drain TAB = Drain
D (TAB)
1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-3P TO-268 (TO-3P)
300
Features
z z
1.13/10 Nm/lb.in. 5.
IXTQ64N25P Datasheet
