Download the IXTQ64N25P datasheet PDF.
This datasheet also covers the IXTT64N25P variant, as both devices belong to the same polarht power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
z z
1.13/10 Nm/lb. in. 5.5 5.0 g g
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International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 250 2.5 5.0 ±100 25 250 48 V V nA µA µA mΩ
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Easy to mount Space savings High power d.
Full PDF Text Transcription for IXTQ64N25P (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXTQ64N25P. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com PolarHTTM Power MOSFET N-Channel Enhancement Mode Preliminary Data Sheet IXTQ 64N25P IXTT 64N25P VDSS ID25 RDS(on) = 250 V = 64 A = 48 mΩ Symbol VDSS ...
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N25P IXTT 64N25P VDSS ID25 RDS(on) = 250 V = 64 A = 48 mΩ Symbol VDSS VDGR VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 250 250 ± 20 V V V A A A mJ J V/ns W °C °C °C °C TO-3P (IXTQ) TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C 64 160 60 40 1.0 10 400 -55 ... +150 150 -55 ... +150 G D S (TAB) TO-268 (IXTT) G G = Gate S = Source S D = Drain TAB = Drain D (TAB) 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-3P TO-268 (
IXTQ64N25P Datasheet
