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PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH 96N20P IXTQ 96N20P IXTT 96N20P
V DSS
ID25
RDS(on)
= 200 V = 96 A ≤ 24 mΩ
TO-247 (IXTH)
Symbol
VDSS VDGR
VGSS V
GSM
ID25 ID(RMS) IDM IAR EAR EAS
dv/dt
PD T
J
TJM Tstg
TL TSOLD Md Weight
Test Conditions
TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continous Transient
TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P, TO-247) TO-3P TO-247 TO-268
Maximum Ratings
200
V
200
V
±20
V
±30
V
96
A
75
A
225
A
60
A
50
mJ
1.
IXTQ96N20P Datasheet
