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IXTT110N10P - N-Channel MOSFET

Download the IXTT110N10P datasheet PDF. This datasheet also covers the IXTQ110N10P variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z z 1.6 mm (0.062 in. ) from case for 10 s Mounting torque TO-3P TO-268 (TO-3P) 300 1.13/10 Nm/lb. in. 5.5 5.0 g g z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150°C Characteristic Values Min. Typ. Max. 100 2.5 5.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTQ110N10P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTT11P50 P-Channel MOSFET
IXTT100N25P N-Channel MOSFET
IXTT10P50 P-Channel MOSFET
IXTT140N10P Power MOSFET
IXTT1N100 High-Voltage MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advance Technical Information TM www.DataSheet4U.com PolarHT Power MOSFET IXTQ 110N10P IXTT 110N10P VDSS ID25 RDS(on) = 100 = 110 = 15 V A mΩ N-Channel Enhancement Mode Symbol VDSS VDGR VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings 100 100 ± 20 V V V A A A A mJ J V/ns TO-3P (IXTQ) TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C 110 75 250 60 40 1.0 10 480 -55 ... +175 175 -55 ... +150 G D S (TAB) TO-268 (IXTT) G S D = Drain TAB = Drain W °C °C °C °C G = Gate S = Source D (TAB) Features z z 1.6 mm (0.062 in.