IXTT110N10P
IXTT110N10P is N-Channel MOSFET manufactured by IXYS.
- Part of the IXTQ110N10P comparator family.
- Part of the IXTQ110N10P comparator family.
Advance Technical Information
TM .. Polar HT Power MOSFET
IXTQ 110N10P IXTT 110N10P
VDSS ID25
RDS(on)
= 100 = 110 = 15
V A mΩ
N-Channel Enhancement Mode
Symbol VDSS VDGR VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ
Maximum Ratings 100 100 ± 20 V V V A A A A m J J V/ns
TO-3P (IXTQ)
TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C
110 75 250 60 40 1.0 10 480 -55 ... +175 175 -55 ... +150
(TAB)
TO-268 (IXTT)
S D = Drain TAB = Drain
W °C °C °C °C
G = Gate S = Source
D (TAB)
Features z z
1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-3P TO-268 (TO-3P)
1.13/10 Nm/lb.in. 5.5 5.0 g g z
International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance
- easy to drive and to protect
Advantages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150°C Characteristic Values Min. Typ. Max. 100 2.5 5.0 ±100 25 250 15 V V n A µA µA mΩ z z z
Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Polar HTTM DMOS transistors utilize proprietary designs and process. US patent is pending.
DS99132(05/04)...
