IXTT52N30P Overview
PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTT52N30P IXTQ52N30P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC.
IXTT52N30P Key Features
- Fast Intrinsic Rectifier
- Avalanche Rated
- Low RDS(ON) and QG
- Low Package Inductance
- High Power Density
- Easy to Mount
- Space Savings