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IXTT52N30P - Power MOSFET

Download the IXTT52N30P datasheet PDF. This datasheet also covers the IXTQ52N30P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Fast Intrinsic Rectifier.
  • Avalanche Rated.
  • Low RDS(ON) and QG.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTQ52N30P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTT52N30P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTT52N30P. For precise diagrams, and layout, please refer to the original PDF.

PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTT52N30P IXTQ52N30P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight ...

View more extracted text
DGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-3P) TO-286 TO-3P Maximum Ratings 300 V 300 V  20 V  30 V 52 A 150 A 52 A 1 J 10 V/ns 400 W -55 ... +150 150 -55 ... +150 300 260  C  C  C °C °C 1.13 / 10 4.0 5.5 Nm/lb.

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