• Part: IXTT52N30P
  • Manufacturer: IXYS
  • Size: 140.45 KB
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IXYS datasheets

IXTT52N30P Description

PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTT52N30P IXTQ52N30P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC.

IXTT52N30P Key Features

  • Fast Intrinsic Rectifier
  • Avalanche Rated
  • Low RDS(ON) and QG
  • Low Package Inductance
  • High Power Density
  • Easy to Mount
  • Space Savings