IXTU01N100 Description
+150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 1000 V 2.0 4.5 V 50 nA 10 A 200 A 60 80 G D S TO-252 (IXTY) G S D (Tab) D (Tab) G = Gate S = Source D = Drain Tab = Drain.
IXTU01N100 Key Features
- International Standard Packages
- Fast Switching Times
- Avalanche Rated
- Rds(on) HDMOSTM Process
- Rugged Polysilicon Gate Cell structure
- High Power Density
- Space Savings