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IXTY01N100 Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Overview: High Voltage Power MOSFET IXTU01N100 IXTY01N100 VDSS = ID25 =  RDS(on) 1000V 100mA 80 N-Channel Enhancement Mode TO-251 (IXTU) Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting force TO-251 TO-252 Maximum Ratings 1000 V 1000 V 20 V 30 V 100 mA 400 mA 25 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 0.40 g 0.35 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 25A VGS(th) VDS = VGS, ID = 25A IGSS VGS =  20V, VDS = 0V IDSS VDS = 0.8 • VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 50mA, Note 1 Characteristic Values Min. Typ. Max. 1000 V 2.0 4.

Key Features

  • International Standard Packages.
  • Fast Switching Times.
  • Avalanche Rated.
  • Rds(on).

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IXTY01N100 Distributor