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IXUC120N10 - Trench Power MOSFET ISOPLUS220

Features

  • l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Trench MOSFET - very low RDS(on) - fast switching - usable intrinsic reverse diode l Low drain to tab capacitance(.

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Datasheet Details

Part number IXUC120N10
Manufacturer IXYS
File Size 56.70 KB
Description Trench Power MOSFET ISOPLUS220
Datasheet download datasheet IXUC120N10 Datasheet
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ADVANCE TECHNICAL INFORMATION Trench Power MOSFET IXUC 120N10 ISOPLUS220TM Electrically Isolated Back Surface VDSS = 100 V ID25 = 120 A RDS(on) = 9.5 mΩ ISOPLUS 220TM Symbol VDSS VGS ID25 ID90 IS25 IS90 ID(RMS) EAS PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25°C to 150°C Continuous TC = 25°C; Note 1 TC = 90°C, Note 1 TC = 25°C; Note 1, 2 TC = 90°C, Note 1, 2 Package lead current limit TC = 25°C TC = 25°C Maximum Ratings 100 ±20 120 90 120 90 45 tlb 300 -55 ... +175 175 -55 ...
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