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L011 - Fast Recovery Epitaxial Diode (FRED) Module

Key Features

  • International standard package with DCB ceramic base plate Planar passivated chips Short recovery time Low switching losses Soft recovery behaviour Isolation voltage 3600 V~ UL registered E 72873 q q q q q q q TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ Tstg TSmax Ptot VISOL Md dS dA a Weight Symbol IR Test Conditions TVJ = 25°C TVJ = 25°C TVJ = 125°C IF = 300 A; IF = 520 A; VT0 rT RthJH RthJC trr IRM VR = VRRM VR = 0.8.
  • VRRM VR = 0.8.
  • VRRM TVJ TVJ TVJ TV.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Fast Recovery Epitaxial Diode (FRED) Module VRSM V 200 VRRM V 200 MEO 550-02DA Type MEO 550-02 DA VRRM = 200 V IFAVM = 582 A trr = 150 ns 3 1 1 3 Symbol IFRMS IFAVM ÿÿx IFRM IFSM Test Conditions TC = 75°C TC = 75°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 822 582 2880 4800 5280 4320 4750 115200 117100 93300 94800 -40...+150 -40...+125 110 A A A A A A A As A2s A2s A2s °C °C °C W V~ V~ 2 TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine It 2 TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.